Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...

Deep vertical holes and re-entrant features challenge the best metrology methods.

NAND flash technology is on a roll with advancements in cell structure and the subsequent boost in storage density. That allows this non-volatile-memory (NVM) chip to deliver faster throughput and ...

Companies Preview 10 th Generation 3D Flash Memory Technology Setting A New Benchmark for Performance, Power Efficiency and Bit Density SAN FRANCISCO--(BUSINESS WIRE)--Kioxia Corporation and Sandisk ...

Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology TOKYO— Toshiba Corporation (TOKYO: 6502) today announced breakthroughs in ...