As semiconductor technology scales down in size, process integration complexity and defects are increasing in 3D NAND flash, partially due to larger stack deposits and thickness variability between ...

Deep vertical holes and re-entrant features challenge the best metrology methods.

Fabrication of 3D NAND devices involves a challenging and complex deposition and etch process. Two etch processes have been identified as substantially impacting 3D NAND product yields: silicon ...

For several decades, NAND flash has been the primary technology for low-cost and large-density data storage applications. This non-volatile memory is present in all major electronic end-use markets, ...

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...